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| CYStech Electronics Corp. Small Signal Schottky diode Spec. No. : C302C2 Issued Date : 2003.12.05 Revised Date : Page No. : 1/3 RB521S-30C2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package. Features *Extremely small surface mounting type.(SC-79/SOD523) *IO=200mA guaranteed despite the size. *Low VF.(VF=0.4V typ. at 200mA) Applications Low current rectification and high speed switching Symbol Outline Absolute Maximum Ratings * Maximum Temperatures Storage Temperature Tstg .................................................................................................... -45~+125C Junction Temperature Tj .............................................................................................................. +125C * Maximum Voltages and Currents (Ta=25C) DC Reverse Voltage VR ...................................................................................................................... 30 V Mean Rectifying Current IF ......................................................................................................... 200 mA Peak Forward Surge Current IFSM......................................... ...................................................1 A RB521S-30C2 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Characteristic Forward Voltage Reverse Leakage Current Symbol VF IR VR=10V Condition IF=200mA Spec. No. : C302C2 Issued Date : 2003.12.05 Revised Date : Page No. : 2/3 Min. - Max. 500 30 Unit mV A Characteristic Curves Forward Current Derating Curve 120 Percentage of Rated Forward Current---(%) 100 80 60 40 20 0 0 25 50 75 100 125 150 1000 Forward Current vs Forward Voltage Forward Current---I F(mA) M ounting on glass epoxy PCBs 100 10 1 0.1 0.01 0.001 0 125 75 25 - 25 0.1 0.2 0.3 0.4 0.5 0.6 Ambient Temperature---TA() Forward Voltage---VF(V) Reverse Leakage Current vs Reverse Voltage Capacitance between terminals---C T(pF) 10 Reverse Leakage Current---I R(mA) 1 0.1 0.01 T a= 25 Capacitance vs Reverse Voltage 10 f=1MHz Ta=25 T a= 125 T a= 75 0.001 0.0001 0 10 20 30 Reverse Voltage---VR(V) 1 0 2 4 6 8 10 12 14 Reverse Voltage---VR(V) RB521S-30C2 CYStek Product Specification CYStech Electronics Corp. SOD-523 Dimension Spec. No. : C302C2 Issued Date : 2003.12.05 Revised Date : Page No. : 3/3 Marking Code : 1 C 2 1 2 Style : Pin 1. Cathode 2. Anode 2-lead SOD-523 Plastic Package CYStek Package Code : C2 *: Typical DIM A bp c D Material: Millimeters Min 0.5 0.25 0.1 1.1 .Max. 0.7 0.35 0.2 1.3 DIM E HE V Millimeters Min. 0.7 1.5 0.15(typ) Max. 0.9 1.7 Notes: 1.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 2.If there is any question with packing specification or packing method, please contact your local CYStek sales office. * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. RB521S-30C2 CYStek Product Specification |
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